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Refurbished Plasma etching tools from Allwin21 Corp

Ad #840857
Contactpeter chen
Address1550 Norman Ave
CitySanta Clara
StateCA
Zip95054
Phone
Web siteClick to visit
TypeNot Applicable
CreatedJuly 2, 2008
UpdatedJuly 30, 2008
ExpiresJuly 2, 2009
Viewed43 times
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Refurbished  Plasma etching tools from Allwin21 CorpRefurbished  Plasma etching tools from Allwin21 CorpRefurbished  Plasma etching tools from Allwin21 Corp
Refurbished  Plasma etching tools from Allwin21 CorpRefurbished  Plasma etching tools from Allwin21 Corp

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Plasma Etch


Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete.
If the etch is intended to make a cavity in a material, the depth of the cavity may be controlled approximately using the etching time and the known etch rate. More often, though, etching must entirely remove the top layer of a multilayer structure, without damaging the underlying or masking layers. The etching system's ability to do this depends on the ratio of etch rates in the two materials (selectivity).
Some etches undercut the masking layer and form cavities with sloping sidewalls. The distance of undercutting is called bias. Etchants with large bias are called isotropic.
Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma systems can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic.
The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.

Allwin21 Corp can provide the following refurbished Etcher equipment.

Refurbished Matrix303
Refurbished Matrix403
Refurbished Gasonics AE2001
Refurbished Gasonics PEP3510




Allwin21 Corp. can also provide Allwin21 Corp proprietary AW Control Software and Superior Temperature Control Technology to upgrade the refurbished equipment which provides the following significant advantages

Integrated process control system
Real time graphics display
Real time process data acquisition, display, and analysis
Programmed comprehensive calibration and diagnostic functions
Better performance and maintenance than the original systems



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